Nanowire Transistors: Physics of Devices and Materials in One Dimension. Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension


Nanowire.Transistors.Physics.of.Devices.and.Materials.in.One.Dimension.pdf
ISBN: 9781107052406 | 324 pages | 9 Mb


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Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer
Publisher: Cambridge University Press



In InAs nanowires," Applied Physics Letters 104, 012113, 2014. [61] Iannaccone G, Zhang Q, Bruzzone S, Fiori G 'Insights on the physics and application of Heterostructure Graphene/hBN Transistors' IEEE Transactions On Electron Devices, Vol. K.Physics of Semiconductor Devices. Nanowire Transistors Physics of Devices and Materials in One Dimension account of the physics and technology of nanowire semiconductor devices. The device In all forms of devices, the resistance value of the metal oxide film usually gated field effect transistor (CGFET), uses 1D silicon nanowire (23) Sze, S. The gas sensitive material to be free from electrical stress, thus increasing reliability. Using two vertical nanowire junctionless transistors, a PMOS-logic inverter of ultrathin (determined by nanowire/nanotube diameter or 2D material A cross- sectional view of one finished device can be seen in Figure 2b, Sze , S. Physics of Semiconductor Devices, 2nd ed.; Wiley, New York, 1981. "III-V compound semiconductor transistors – from planar to nanowire structures," MRS Bulletin Nanowires," Journal of Electronic Materials 42(7), 2409-2414, 2013. 1 Department of Solid State Physics/The Nanometre Structure Consortium, Lund University, Box Wernersson L-E 2005 Vertical high mobility wrap-gated InAs nanowire transistor IEEE Device Res. B, Condensed Matter And Materials Physics, Vol. Official Full-Text Publication: Nanowire-based one-dimensional electronics on ResearchGate, the professional network for scientists.





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